Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 15/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A SC70-6 |
In Stock38,987 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 145mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88 (SC-70-6) |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.6A SSOT3 |
In Stock40,509 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SuperSOT-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TSON |
In Stock21,790 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSIX-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 0.2mA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 630mW (Ta), 86W (Tc) |
Operating Temperature: 175°C |
Mounting Type: Surface Mount |
Supplier Device Package: 8-TSON Advance (3.3x3.3) |
Package / Case: 8-PowerVDFN |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 23A TDSON-8 |
In Stock43,372 More on Order |
|
Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 756pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 32W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TDSON-8-5 |
Package / Case: 8-PowerTDFN |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5A MICROFET |
In Stock56,932 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MicroFET (2x2) |
Package / Case: 6-VDFN Exposed Pad |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V .15MA SOT23-3 |
In Stock14,080 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 150µA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 330mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 1212-8 |
In Stock4,032 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 34A LFPAK |
In Stock29,606 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 74W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.2A SOT-223-4 |
In Stock39,001 More on Order |
|
Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 12A DPAK |
In Stock54,294 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 48W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 17.5A POWERDI |
In Stock32,351 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 5404pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4.1A SOT23-3 |
In Stock211,787 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.9A SOT23-3 |
In Stock54,555 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.9A 6-TSOP |
In Stock43,628 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 3.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.15A SOT23-3 |
In Stock37,451 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 730mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1.3A SOT23-6 |
In Stock96,322 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-26 |
Package / Case: SOT-23-6 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1.5A TSMT |
In Stock35,754 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 600mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.6A SOT223 |
In Stock60,026 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18A LFPAK33 |
In Stock53,492 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 71mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 65W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.3A SOT-223 |
In Stock35,091 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.15A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 44A LFPAK |
In Stock85,821 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 74W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 12A SC-70-6 |
In Stock52,864 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 3.5W (Ta), 19W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8A 6-TSOP |
In Stock42,713 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 4.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 6TSOP |
In Stock38,874 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 5W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.77A SOT23-3 |
In Stock24,558 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A 1212-8 |
In Stock4,172 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.7W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 12A TSDSON-8 |
In Stock6,193 More on Order |
|
Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 26W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSDSON-8-FL |
Package / Case: 8-PowerTDFN |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 300MA SOT223 |
In Stock55,909 More on Order |
|
Manufacturer: STMicroelectronics |
Series: SuperMESH™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3A SOT223 |
In Stock8,227 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A 8VSON |
In Stock120,155 More on Order |
|
Manufacturer: |
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 53W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (3x3.15) |
Package / Case: 8-PowerVDFN |