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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 198/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.4A TO236AB |
In Stock418 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 25A 30V POWERDI333 |
In Stock182 More on Order |
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Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 900mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 (Type UX) |
Package / Case: 8-PowerVDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 1A SOT-363 |
In Stock391 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 630mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 5.5A MCPH6 |
In Stock468 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-MCPH |
Package / Case: 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single SMALL SIGNAL MOSFET P-CH VDSS:-2 |
In Stock194 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V |
Vgs (Max): +6V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23F |
Package / Case: SOT-23-3 Flat Leads |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 13A UDFN2020-6 |
In Stock573 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-DFN2020-6 (Type F) |
Package / Case: 6-UDFN Exposed Pad |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 35V 6A CPH6 |
In Stock479 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 37mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-CPH |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-346 |
In Stock462 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SMT3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A SOT-363 |
In Stock226 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70-6 (SOT-363) |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.2A SC70-6 |
In Stock516 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 750mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-88 (SC-70-6) |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 2.8A SOT1220 |
In Stock595 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DFN2020MD-6 |
Package / Case: 6-UDFN Exposed Pad |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.8A TO236AB |
In Stock240 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 490mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 20V 3.5A POWER MOSFET |
In Stock653 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT6 |
Package / Case: 6-SMD, Flat Leads |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A HSMT8 |
In Stock470 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-HSMT (3.2x3) |
Package / Case: 8-PowerVDFN |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single N-CHANNEL,MOSFETS,SOT-23 PACKAGE |
In Stock391 More on Order |
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Manufacturer: Micro Commercial Co |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2A |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 540MA 3DFN |
In Stock493 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 460mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: X2-DFN1006-3 |
Package / Case: 3-XFDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23 |
In Stock423 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V |
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 390mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 410MA 3DFN |
In Stock454 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 470mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-DFN1006 (1.0x0.6) |
Package / Case: 3-UFDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V X2-DFN1006-3 |
In Stock504 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 71pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 520mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: X2-DFN1006-3 |
Package / Case: 3-XFDFN |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 22A 6-SON |
In Stock195 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-SON (2x2) |
Package / Case: 6-WDFN Exposed Pad |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V MICROFOOT |
In Stock637 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 500mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-Microfoot |
Package / Case: 4-XFBGA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2.6A 4-UFCSP |
In Stock521 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V |
Vgs (Max): -5V |
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 820mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-WLB1010-4 |
Package / Case: 4-UFBGA, WLBGA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A CPH3 |
In Stock563 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-CPH |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET NCH 30V 15A UDFNB |
In Stock526 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSIX-H |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: 150°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.5A 6-DFN |
In Stock559 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-DFN2020-6 (Type B) |
Package / Case: 6-UDFN Exposed Pad |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23 |
In Stock570 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V |
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 390mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 15A UDFN2020-6 |
In Stock320 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-DFN2020-6 (Type F) |
Package / Case: 6-UDFN Exposed Pad |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 115MA SOT-523 |
In Stock581 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-523 |
Package / Case: SOT-523 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.8A PWRDI8 |
In Stock381 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.18W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI5060-8 |
Package / Case: 8-PowerTDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 14.2A UDFN2020-6 |
In Stock324 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-DFN2020-6 (Type F) |
Package / Case: 6-UDFN Exposed Pad |