Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 207/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.6A TSOT26 |
In Stock211 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSOT-26 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 10A DPAK |
In Stock417 More on Order |
|
Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 28W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET P CH 20V 6A 2-2AA1A |
In Stock195 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSVI |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFNB (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V MICROFOOT |
In Stock498 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6) |
Package / Case: 4-UFBGA |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 5A TSOT26 |
In Stock603 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSOT-26 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single 4V DRIVE PCH MOSFET (CORRESPONDS |
In Stock319 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: 150°C |
Mounting Type: Surface Mount |
Supplier Device Package: TUMT6 |
Package / Case: 6-SMD, Flat Leads |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.6A CHIPFET |
In Stock389 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.2A CHIPFET |
In Stock315 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ChipFET™ |
Package / Case: 8-SMD, Flat Lead |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8A 8SOIC |
In Stock468 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8-MLP |
In Stock436 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench®, SyncFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta), 27W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP (3.3x3.3) |
Package / Case: 8-PowerWDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 7.8A SC70-6 |
In Stock297 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 13.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A LFPAK |
In Stock385 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1249pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 55W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK33 |
Package / Case: SOT-1210, 8-LFPAK33 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.2A 8SOIC |
In Stock468 More on Order |
|
Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.2A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 897pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOIC |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.316A SOT89-3 |
In Stock183 More on Order |
|
Manufacturer: Microchip Technology |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 316mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.6W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: TO-243AA (SOT-89) |
Package / Case: TO-243AA |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 25A LFPAK |
In Stock508 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1119pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 64W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 27A U8FL |
In Stock445 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 22.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3W (Ta), 14.3W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-WDFN (3.3x3.3) |
Package / Case: 8-PowerWDFN |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 45V 16A TCPT3 |
In Stock3,621 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 20W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TCPT3 |
Package / Case: 3-SMD, Flat Leads |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 2A WEMT6 |
In Stock495 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WEMT |
Package / Case: SOT-563, SOT-666 |
|
|
|
Taiwan Semiconductor Corporation |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 78A 8PDFN |
In Stock449 More on Order |
|
Manufacturer: Taiwan Semiconductor Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2557pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 39W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PDFN (3x3) |
Package / Case: 8-PowerWDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 8A 6-TSOP |
In Stock258 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta), 3.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8-HSMT |
In Stock233 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-HSMT (3.2x3) |
Package / Case: 8-PowerVDFN |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7.7A MICRO FOOT |
In Stock276 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 660mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Power Micro Foot® (2.4x2) |
Package / Case: 30-XFBGA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 3.6A DPAK |
In Stock255 More on Order |
|
Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CHA 30V 16A POWERDI |
In Stock270 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI5060-8 |
Package / Case: 8-PowerTDFN |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.83A SOT-223 |
In Stock436 More on Order |
|
Manufacturer: ON Semiconductor |
Series: QFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 830mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 415mA, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 8.2A 6UDFN |
In Stock407 More on Order |
|
Manufacturer: ON Semiconductor |
Series: µCool™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 700mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-UDFN (2x2) |
Package / Case: 6-UDFN Exposed Pad |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A SOT-26 |
In Stock373 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-26 |
Package / Case: SOT-23-6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A SC-70 |
In Stock380 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 19.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 24A LFPAK |
In Stock121 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 5V |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 64W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 79A LFPAK |
In Stock445 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 55W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |