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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 216/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 18A PWRDI3333-8 |
In Stock278 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 4621pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 8.5A TO251 |
In Stock3,191 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ P7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 43W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO251-3 |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock543 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.9A 6-TSOP |
In Stock492 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 3.3W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 17A DPAK |
In Stock508 More on Order |
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Manufacturer: ON Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 18W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS Integrated Circuits Division |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V SOT-223 |
In Stock2,395 More on Order |
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Manufacturer: IXYS Integrated Circuits Division |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 0V |
Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 125°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.6A SOT-23-6 |
In Stock243 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-6 |
Package / Case: SOT-23-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.7A WLCSP |
In Stock534 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.7W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 4-WLCSP (1x1) |
Package / Case: 4-XFBGA, WLCSP |
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Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A 8VSON |
In Stock1,842 More on Order |
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Manufacturer: |
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta), 53W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-VSONP (3x3.15) |
Package / Case: 8-PowerVDFN |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P CH 30V 17A TO252 |
In Stock687 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 59.2nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6234pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.7W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252-3 |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.5A POWER33 |
In Stock526 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2045pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-MLP (3.3x3.3) |
Package / Case: 8-PowerWDFN |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A DPAK |
In Stock275 More on Order |
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Manufacturer: STMicroelectronics |
Series: DeepGATE™, STripFET™ VI |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 70W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.4A SOT-23F |
In Stock466 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V |
Vgs (Max): 12V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23F |
Package / Case: SOT-23-3 Flat Leads |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.8A SOT23 |
In Stock523 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 5V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Torex Semiconductor Ltd |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.5A SOT89 |
In Stock1,922 More on Order |
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Manufacturer: Torex Semiconductor Ltd |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-89 |
Package / Case: TO-243AA |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 8.5A POWERDI |
In Stock235 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 47.5nC @ 5V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI5060-8 |
Package / Case: 8-PowerTDFN |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 35A DPAK |
In Stock342 More on Order |
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Manufacturer: ON Semiconductor |
Series: PowerTrench® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 88W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-252AA |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 8-SOIC |
In Stock487 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 48A DPAK |
In Stock570 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 103W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.3A SOT-23F |
In Stock458 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V |
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.2A, 5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V |
Vgs (Max): 12V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23F |
Package / Case: SOT-23-3 Flat Leads |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single RQ6E045RP IS THE LOW ON - RESIST |
In Stock317 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 950mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT6 (SC-95) |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 30V 11A MIDDLE POWER MOSFET |
In Stock309 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V |
Vgs(th) (Max) @ Id: 1.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TSMT8 |
Package / Case: 8-SMD, Flat Lead |
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Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 8HSO |
In Stock575 More on Order |
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Manufacturer: Panasonic Electronic Components |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1.45mA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 19W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: HSO8-F4-B |
Package / Case: 8-PowerSMD, Flat Leads |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4A SOP8 |
In Stock485 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 650mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SOP |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A PPAK SO-8 |
In Stock351 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 4.5W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SO-8 |
Package / Case: PowerPAK® SO-8 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 16A PPAK 1212-8 |
In Stock522 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Central Semiconductor Corp |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 650MA SOT523 |
In Stock381 More on Order |
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Manufacturer: Central Semiconductor Corp |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V |
Vgs (Max): 8V |
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-523 |
Package / Case: SOT-523 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 79A LFPAK |
In Stock355 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 94.3W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: LFPAK56, Power-SO8 |
Package / Case: SC-100, SOT-669 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.6A PPAK 1212-8 |
In Stock210 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 62W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® 1212-8 |
Package / Case: PowerPAK® 1212-8 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A D2PAK |
In Stock16,103 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 204W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |