FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 223/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDD8770	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 35A DPAK	In Stock111 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STD46N6F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A DPAK	In Stock434 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 30V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AOD2544	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 6.5A TO252	In Stock404 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 75V	FET Feature: -	Power Dissipation (Max): 6.2W (Ta), 75W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5C460NLT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V SO8FL	In Stock558 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.6W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
AOD256	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 19A TO252	In Stock212 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 75V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TSM70NB1R4CP ROG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 700V 3A TO252	In Stock608 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 317pF @ 100V	FET Feature: -	Power Dissipation (Max): 28W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
CSD17552Q5A	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A 8SON	In Stock312 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 1.9V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSONP (5x6)	Package / Case: 8-PowerTDFN
TPH14006NH,L1Q	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 14A 8-SOP ADV	In Stock442 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVIII-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 4V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta), 32W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP Advance (5x5)	Package / Case: 8-PowerVDFN
DMTH4007LPSQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 40V 15.5A POWERDI	In Stock495 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.7W (Ta), 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
DMT6009LPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CHA 60V 10.6A POWERDI	In Stock323 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
BUK9Y7R2-60E,115	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A LFPAK	In Stock371 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 5026pF @ 25V	FET Feature: -	Power Dissipation (Max): 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
CSD17322Q5A	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 87A 8SON	In Stock289 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 87A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 8V	Rds On (Max) @ Id, Vgs: 8.8mOhm @ 14A, 8V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 15V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSONP (5x6)	Package / Case: 8-PowerTDFN
DMT10H015LFG-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A	In Stock533 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V	FET Feature: -	Power Dissipation (Max): 2W (Ta), 35W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
BUK662R4-40C,118	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK	In Stock3,290 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V	FET Feature: -	Power Dissipation (Max): 263W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MTMF82310BBF	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A S08	In Stock4,127 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 18A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SO8-F1-B	Package / Case: 8-SMD, Flat Lead
FJ3P02100L	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P CH 20V 4.4A PMCP	In Stock208 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 3.7A, 4.5V	Vgs(th) (Max) @ Id: 1.05V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-PMCP	Package / Case: 3-SMD, Non-Standard
NVD6416ANLT4G-VF01	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 19A DPAK	In Stock612 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RSH090N03TB1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A SOP8	In Stock502 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FDD6680AS	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A DPAK	In Stock220 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®, SyncFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 55A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V	FET Feature: -	Power Dissipation (Max): 60W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMT10H015LPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.3A	In Stock256 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V	FET Feature: -	Power Dissipation (Max): 1.3W (Ta), 46W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
FQB11P06TM	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 11.4A D2PAK	In Stock1,305 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 5.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.13W (Ta), 53W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQD6N50CTM	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.5A DPAK	In Stock327 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 61W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8028-H(TE12LQM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A SOP-8 ADV	In Stock4,401 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIV-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta), 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP Advance (5x5)	Package / Case: 8-PowerVDFN
NVATS5A112PLZT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 27A ATPAK	In Stock451 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 20V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ATPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
NVATS5A106PLZT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 33A ATPAK	In Stock582 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 33A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 20V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: ATPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FCD2250N80Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2.6A TO252-3	In Stock516 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 260µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V	FET Feature: -	Power Dissipation (Max): 39W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
STL20N6F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A	In Stock439 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ F7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta), 78W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (3.3x3.3)	Package / Case: 8-PowerVDFN
IRFR9210TRPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 1.9A DPAK	In Stock402 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SIRA32DP-T1-RE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A POWERPAKSO-8	In Stock371 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET® Gen IV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V	Vgs (Max): +16V, -12V	Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V	FET Feature: -	Power Dissipation (Max): 65.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SQ9407EY-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 4.6A 8SO	In Stock413 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V	FET Feature: -	Power Dissipation (Max): 3.75W (Tc)	Operating Temperature: -55°C ~ 175°C (TA)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)