FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 233/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SQD19P06-60L_T4GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 20A TO252AA	In Stock351 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V	FET Feature: -	Power Dissipation (Max): 46W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SQ4182EY-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 32A 8SOIC	In Stock342 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 32A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 15V	FET Feature: -	Power Dissipation (Max): 7.1W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
BUK9E08-55B,127	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A I2PAK	In Stock3,677 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101, TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V	FET Feature: -	Power Dissipation (Max): 203W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
SQD07N25-350H_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 7A TO252AA	In Stock571 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 25V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SQD40061EL_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHAN 40V	In Stock319 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ848EP-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 47A POWERPAKSO-8	In Stock228 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
TSM3N90CP ROG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A TO252	In Stock430 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SQD23N06-31L_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 23A TO252	In Stock445 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RS1E350BNTB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 35A 8HSOP	In Stock536 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 15V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HSOP	Package / Case: 8-PowerTDFN
NTMFS6H836NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V SO8FL	In Stock497 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 95µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 40V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 89W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
SQJ431AEP-T1_GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CHAN 200V	In Stock385 More on Order	Manufacturer: Vishay Siliconix	Series: Automotive, AEC-Q101, TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: 8-PowerTDFN
IRFU2405PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 56A I-PAK	In Stock19,917 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 56A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
CSD16322Q5C	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 97A 8SON	In Stock509 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 97A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 3V, 8V	Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 8V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): +10V, -8V	Input Capacitance (Ciss) (Max) @ Vds: 1365pF @ 12.5V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SON	Package / Case: 8-PowerTDFN
RS1L120GNTB	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single RS1L120GN IS LOW ON - RESISTANCE	In Stock367 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12.7mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HSOP	Package / Case: 8-PowerTDFN
CSD16408Q5	Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 113A 5X6 8SON	In Stock424 More on Order	Manufacturer:	Series: NexFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 113A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V	Vgs (Max): +16V, -12V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-VSONP (5x6)	Package / Case: 8-PowerTDFN
FDMC2674	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 220V 1A 3.3SQ MLP	In Stock348 More on Order	Manufacturer: ON Semiconductor	Series: UniFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 220V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 366mOhm @ 1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 100V	FET Feature: -	Power Dissipation (Max): 2.1W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-MLP (3.3x3.3)	Package / Case: 8-PowerWDFN
SI7322DN-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18A PPAK 1212-8	In Stock622 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 50V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 52W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
IRFR9010TRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 5.3A DPAK	In Stock200 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR310TRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 1.7A DPAK	In Stock125 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 400V	Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SI7636DP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17A PPAK SO-8	In Stock564 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI4426DY-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A 8-SOIC	In Stock167 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 25mOhm @ 8.5A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STL60P4LLF6	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 60A 8POWERFLAT	In Stock300 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™ F6	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerFlat™ (5x6)	Package / Case: 8-PowerVDFN
STD5NK50ZT4	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.4A DPAK	In Stock437 More on Order	Manufacturer: STMicroelectronics	Series: SuperMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FQB33N10LTM	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 33A D2PAK	In Stock1,851 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.75W (Ta), 127W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI4430BDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A 8-SOIC	In Stock332 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
STD130N6F7	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 80A DPAK	In Stock597 More on Order	Manufacturer: STMicroelectronics	Series: STripFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 30V	FET Feature: -	Power Dissipation (Max): 134W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RD3T100CNTL1	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 200V 10A POWER MOSFET	In Stock409 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 5.25V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): 85W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMNH6012SPSQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 50A POWERDI	In Stock413 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
FDD3672	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 44A D-PAK	In Stock237 More on Order	Manufacturer: ON Semiconductor	Series: UltraFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V	FET Feature: -	Power Dissipation (Max): 135W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDS6699S	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A 8SOIC	In Stock250 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®, SyncFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.6mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)