FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 260/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSZ900N15NS3GATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 13A TDSON-8	In Stock598 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 8V, 10V	Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 75V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSDSON-8	Package / Case: 8-PowerTDFN
SPD50N03S2L06GBTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TO252-3	In Stock492 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 85µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V	FET Feature: -	Power Dissipation (Max): 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3103TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A DPAK	In Stock521 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSC025N03LSGATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8	In Stock337 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-5	Package / Case: 8-PowerTDFN
STD5406NT4G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 12.2A DPAK	In Stock390 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V	FET Feature: -	Power Dissipation (Max): 3W (Ta), 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7805TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock265 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IPD048N06L3GBTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A TO252-3	In Stock601 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 58µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFH7545TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 85A 6-PQFN	In Stock422 More on Order	Manufacturer: Infineon Technologies	Series: StrongIRFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PQFN (5x6)	Package / Case: 8-PowerTDFN
BSC026NE2LS5ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 24A 8TDSON	In Stock240 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 29W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-7	Package / Case: 8-PowerTDFN
BSZ12DN20NS3GATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 11.3A 8TSDSON	In Stock526 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSDSON-8	Package / Case: 8-PowerTDFN
FDD8874	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 116A D-PAK	In Stock322 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 15V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPDH4N03LAG	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 90A TO252-3-11	In Stock508 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ0901NSIATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A TSDSON	In Stock369 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V	FET Feature: Schottky Diode (Body)	Power Dissipation (Max): 2.1W (Ta), 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSDSON-8-FL	Package / Case: 8-PowerTDFN
IRF8788TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 24A 8-SO	In Stock349 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 24A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRFR6215TRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock447 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSC025N03MSGATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8	In Stock371 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-1	Package / Case: 8-PowerTDFN
IRF3717TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 20A 8-SOIC	In Stock535 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.45V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF9530NSTRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 14A D2PAK	In Stock1,392 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSC0901NSIATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8TDSON	In Stock235 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-6	Package / Case: 8-PowerTDFN
IPD60R600P7ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 6A TO252-3	In Stock384 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ P7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 80µA	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD80R900P7ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6A TO252-3	In Stock382 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ P7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 110µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ34NSTRLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 29A D2PAK	In Stock542 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 29A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD50P03P4L11ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50A TO252-3	In Stock327 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 85µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): +5V, -16V	Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V	FET Feature: -	Power Dissipation (Max): 58W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPC100N04S5L2R6ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 8TDSON-34	In Stock151 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2925pF @ 25V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-34	Package / Case: 8-PowerTDFN
IPD60R600P6ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7.3A TO252	In Stock130 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ P6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD04N03LB G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A TO-252	In Stock262 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 70µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUZ31 H3045A	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 14.5A TO263	In Stock1,715 More on Order	Manufacturer: Infineon Technologies	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V	FET Feature: -	Power Dissipation (Max): 95W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD90N04S403ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO252-3-313	In Stock482 More on Order	Manufacturer: Infineon Technologies	Series: Automotive, AEC-Q101, OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 53µA	Gate Charge (Qg) (Max) @ Vgs: 66.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3-313	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSC046N02KSGAUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 80A TDSON-8	In Stock621 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 110µA	Gate Charge (Qg) (Max) @ Vgs: 27.6nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-1	Package / Case: 8-PowerTDFN
IRF9310TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 20A 8-SOIC	In Stock567 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)