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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 3/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO-220AB |
In Stock1,467 More on Order |
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Manufacturer: STMicroelectronics |
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 315W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220 |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 8.3A TO-247 |
In Stock9,416 More on Order |
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Manufacturer: STMicroelectronics |
Series: SuperMESH™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 230W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 950V 17.5A TO-220 |
In Stock3,187 More on Order |
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Manufacturer: STMicroelectronics |
Series: SuperMESH5™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 950V |
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220-3 |
Package / Case: TO-220-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 33A D2PAK |
In Stock3,960 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 190W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 42A D2PAK |
In Stock4,413 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ V |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO-247 |
In Stock3,208 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 34A EP TO247 |
In Stock1,590 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ M2-EP |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 250W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 14A TO-247 |
In Stock1,152 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ K5 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1500V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3145pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 446W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 110A MAX247 |
In Stock1,420 More on Order |
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Manufacturer: STMicroelectronics |
Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 625W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: MAX247™ |
Package / Case: TO-247-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 310MA SOT23 |
In Stock1,314,612 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 |
In Stock454,101 More on Order |
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Manufacturer: Micro Commercial Co |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 200mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.36A SOT-23 |
In Stock792,783 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 115MA SOT23-3 |
In Stock6,195,093 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.115A SOT-23 |
In Stock2,319,629 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 200MA SOT-23 |
In Stock453,638 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.2A EMT3 |
In Stock955,319 More on Order |
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Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 2.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 150mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: EMT3F (SOT-416FL) |
Package / Case: SC-89, SOT-490 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 200MA SOT23-3 |
In Stock1,881,537 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23-3 |
In Stock6,852,118 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 |
In Stock343,100 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA SOT-23 |
In Stock874,456 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 830mW (Ta) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A |
In Stock46,480 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 380mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT23-3 |
In Stock1,836,366 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 350MA SOT23 |
In Stock1,230,782 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 220MA SOT-23 |
In Stock2,036,468 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: 1.06V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 360MA TO-236AB |
In Stock910,045 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) |
Operating Temperature: -55°C ~ 150°C (TA) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT23-3 |
In Stock213,731 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT-23 |
In Stock237,313 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 0.17A SOT-23 |
In Stock197,658 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 200MA SOT-23 |
In Stock1,343,509 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.2A SOT23 |
In Stock530,247 More on Order |
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Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |