Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 46/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A TO247-3 |
In Stock757 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolMOS™ C7 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1.24mA |
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 43.3A TO247 |
In Stock1,942 More on Order |
|
Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA |
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 391W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET NCH 650V 39A TO247N |
In Stock2,080 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V |
FET Feature: - |
Power Dissipation (Max): 165W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Transphorm |
Transistors - FETs, MOSFETs - Single GANFET N-CH 900V 15A TO220AB |
In Stock1,709 More on Order |
|
Manufacturer: Transphorm |
Series: - |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 8V |
Vgs (Max): ±18V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 600V |
FET Feature: - |
Power Dissipation (Max): 78W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 350MA 3TO-39 |
In Stock955 More on Order |
|
Manufacturer: Microchip Technology |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 90V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 6.25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-39 |
Package / Case: TO-205AD, TO-39-3 Metal Can |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 8A TO-247 |
In Stock1,931 More on Order |
|
Manufacturer: STMicroelectronics |
Series: PowerMESH™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1500V |
Current - Continuous Drain (Id) @ 25°C: 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 89.3nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3255pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 320W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 650V 68.5A PG-TO247 |
In Stock2,058 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 3.3mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320A TO-247 |
In Stock604 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 320A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1000W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 75A TO247 |
In Stock400 More on Order |
|
Manufacturer: ON Semiconductor |
Series: SuperFET® III |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA |
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V |
FET Feature: Super Junction |
Power Dissipation (Max): 595W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 Long Leads |
Package / Case: TO-247-3 |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single 1000V, 65 MOHM, G3 SIC MOSFET |
In Stock4,618 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: C3M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: 3.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V |
Vgs (Max): +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V |
FET Feature: - |
Power Dissipation (Max): 113.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-4L |
Package / Case: TO-247-4 |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 35A D2PAK-7 |
In Stock2,375 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: C3M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: 3.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V |
Vgs (Max): +15V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V |
FET Feature: - |
Power Dissipation (Max): 113.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK-7 |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A D2PAK-7 |
In Stock1,811 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: C3M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V |
Vgs (Max): +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 113.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK-7 |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A TO247-4 |
In Stock1,665 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: C3M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V |
Vgs (Max): +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 113.6W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-4L |
Package / Case: TO-247-4 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 160A TO-264 |
In Stock2,509 More on Order |
|
Manufacturer: IXYS |
Series: GigaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1390W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 39A TO-247 |
In Stock942 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 4285pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-247 |
In Stock620 More on Order |
|
Manufacturer: IXYS |
Series: Linear L2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 540W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 (IXTH) |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 47A TO-247 |
In Stock3,046 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 415W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
Transphorm |
Transistors - FETs, MOSFETs - Single GANFET N-CH 650V 27A TO220 |
In Stock906 More on Order |
|
Manufacturer: Transphorm |
Series: - |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V |
Vgs(th) (Max) @ Id: 2.6V @ 400uA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V |
Vgs (Max): ±18V |
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 16A TO-247 |
In Stock1,095 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 660W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 68A TO247 |
In Stock914 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ II Plus |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 22A TO-247 |
In Stock6,803 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 18V |
Vgs (Max): +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 165W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 12A TO-247AD |
In Stock2,580 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AD (IXFH) |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 54.9A TO-247 |
In Stock738 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolMOS™ C3 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3.3mA |
Gate Charge (Qg) (Max) @ Vgs: 288nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7520pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 44A TO-264 |
In Stock1,152 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, PolarHT™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 190mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 40A TO-264 |
In Stock2,871 More on Order |
|
Manufacturer: IXYS |
Series: PolarP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 90A TO-264 |
In Stock630 More on Order |
|
Manufacturer: IXYS |
Series: PolarP™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 140A TO-264 |
In Stock696 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1040W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264AA (IXFK) |
Package / Case: TO-264-3, TO-264AA |
|
|
|
Transphorm |
Transistors - FETs, MOSFETs - Single GANFET N-CH 650V 34A TO247-3 |
In Stock635 More on Order |
|
Manufacturer: Transphorm |
Series: - |
FET Type: N-Channel |
Technology: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 12V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 119W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 31.6A TO247 |
In Stock21,490 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: C2M™ |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 192W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 70A ISOPLUS247 |
In Stock513 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS247™ |
Package / Case: ISOPLUS247™ |