Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Voltage | Power Dissipation (Max) | Voltage - Output | Voltage - Offset (Vt) | Current - Gate to Anode Leakage (Igao) | Current - Valley (Iv) | Current - Peak | Package / Case |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock26,523 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 |
In Stock1,561 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 |
In Stock305 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock240 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: * |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: - |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): - |
Current - Peak: - |
Package / Case: - |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock571 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock203 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock486 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
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ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock444 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction TRANS PROG UNIJUNCT 40V TO92 |
In Stock580 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock299 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock299 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock406 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock358 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock228 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
ON Semiconductor |
Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 |
In Stock321 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 300mW |
Voltage - Output: 11V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock421 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock346 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock484 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 1.6V |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 50µA |
Current - Peak: 2µA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 |
In Stock340 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: 40V |
Power Dissipation (Max): 167mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): 600mV |
Current - Gate to Anode Leakage (Igao): 10nA |
Current - Valley (Iv): 25µA |
Current - Peak: 150nA |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock477 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 18mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock247 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 3V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock336 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 5V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 4mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock460 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): 300mW |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 6mA |
Current - Peak: 400nA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock552 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 6V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 2µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock445 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 3V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 1µA |
Package / Case: TO-206AA, TO-18-3 Metal Can |
|
|
Central Semiconductor Corp |
Transistors - Programmable Unijunction THROUGH-HOLE UJT |
In Stock117 More on Order |
|
Manufacturer: Central Semiconductor Corp |
Series: - |
Voltage: - |
Power Dissipation (Max): - |
Voltage - Output: 1V |
Voltage - Offset (Vt): - |
Current - Gate to Anode Leakage (Igao): - |
Current - Valley (Iv): 2mA |
Current - Peak: 400nA |
Package / Case: TO-206AA, TO-18-3 Metal Can |