Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BSC012N06NSATMA1 |
| File Size | 836.01 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSC012N06NSATMA1 |
| Description | TRENCH 40<-<100V |
BSC012N06NSATMA1 - Infineon Technologies
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BSC012N06NSATMA1 | Infineon Technologies | TRENCH 40<-<100V | 323 More on Order |
URL Link
www.zouser.com/datasheet/BSC012N06NSATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSON-8-3 Package / Case 8-PowerTDFN |