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BSC012N06NSATMA1


Part Number BSC012N06NSATMA1
Zouser Part # BSC012N06NSATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description TRENCH 40<-<100V
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSC012N06NSATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock323 - More on Order
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BSC012N06NSATMA1 Specifications

Part Number BSC012N06NSATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-3
Package / Case 8-PowerTDFN

BSC012N06NSATMA1 Documents

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