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| Datasheet | IPD80R3K3P7ATMA1 |
| File Size | 970.42 KB |
| Total Pages | 13 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPD80R3K3P7ATMA1 |
| Description | MOSFET N-CH 800V 1.9A TO252-3 |
IPD80R3K3P7ATMA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V Vgs(th) (Max) @ Id 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V FET Feature - Power Dissipation (Max) 18W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |