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IPD80R3K3P7ATMA1


Part Number IPD80R3K3P7ATMA1
Zouser Part # IPD80R3K3P7ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 1.9A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD80R3K3P7ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock331 - More on Order
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IPD80R3K3P7ATMA1 Specifications

Part Number IPD80R3K3P7ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ P7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V
FET Feature -
Power Dissipation (Max) 18W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R3K3P7ATMA1 Documents

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