Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPI12CNE8N G |
| File Size | 489.71 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IPI12CNE8N G, IPD12CNE8N G, IPB12CNE8N G, IPP12CNE8N G |
| Description | MOSFET N-CH 85V 67A TO262-3, MOSFET N-CH 85V 67A TO252-3, MOSFET N-CH 85V 67A TO263-3, MOSFET N-CH 85V 67A TO-220 |
IPI12CNE8N G - Infineon Technologies
The Products You May Be Interested In
 |
IPI12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO262-3 | 340 More on Order |
 |
IPD12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO252-3 | 289 More on Order |
 |
IPB12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO263-3 | 580 More on Order |
 |
IPP12CNE8N G | Infineon Technologies | MOSFET N-CH 85V 67A TO-220 | 271 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.6mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.4mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |