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IPB12CNE8N G


Part Number IPB12CNE8N G
Zouser Part # IPB12CNE8N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 85V 67A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB12CNE8N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock580 - More on Order
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Lead-TimeCan Ship Immediately
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IPB12CNE8N G Specifications

Part Number IPB12CNE8N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 40V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB12CNE8N G Documents

IPB12CNE8N G, IPB12CNE8N G Datasheet (Total Pages: 12, Size: 489.71 KB)
IPI12CNE8N G Datasheet CoverIPI12CNE8N G Datasheet Page 2IPI12CNE8N G Datasheet Page 3IPI12CNE8N G Datasheet Page 4IPI12CNE8N G Datasheet Page 5IPI12CNE8N G Datasheet Page 6IPI12CNE8N G Datasheet Page 7IPI12CNE8N G Datasheet Page 8IPI12CNE8N G Datasheet Page 9IPI12CNE8N G Datasheet Page 10IPI12CNE8N G Datasheet Page 11IPI12CNE8N G Datasheet Page 12

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