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| Datasheet | IXFN82N60Q3 |
| File Size | 125.13 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN82N60Q3 |
| Description | MOSFET N-CH 600V 66A SOT-227 |
IXFN82N60Q3 - IXYS
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IXFN82N60Q3 | IXYS | MOSFET N-CH 600V 66A SOT-227 | 454 More on Order |
URL Link
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |