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IXFN82N60Q3
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IXFN82N60Q3


Part Number IXFN82N60Q3
Zouser Part # IXFN82N60Q3
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 66A SOT-227
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXFN82N60Q3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock454 - More on Order
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IXFN82N60Q3 Specifications

Part Number IXFN82N60Q3
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

IXFN82N60Q3 Documents

IXFN82N60Q3, IXFN82N60Q3 Datasheet (Total Pages: 5, Size: 125.13 KB)
IXFN82N60Q3 Datasheet CoverIXFN82N60Q3 Datasheet Page 2IXFN82N60Q3 Datasheet Page 3IXFN82N60Q3 Datasheet Page 4IXFN82N60Q3 Datasheet Page 5

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