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IXTU1R4N60P Datasheet

IXTU1R4N60P Cover
DatasheetIXTU1R4N60P
File Size152.02 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXTU1R4N60P, IXTP1R4N60P, IXTY1R4N60P
Description MOSFET N-CH 600V 1.4A TO251, MOSFET N-CH 600V 1.4A TO-220, MOSFET N-CH 600V 1.4A D-PAK

IXTU1R4N60P - IXYS

IXTU1R4N60P Datasheet Page 1
IXTU1R4N60P Datasheet Page 2
IXTU1R4N60P Datasheet Page 3
IXTU1R4N60P Datasheet Page 4

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URL Link

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63