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IXTP1R4N60P


Part Number IXTP1R4N60P
Zouser Part # IXTP1R4N60P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 1.4A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXTP1R4N60P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock271 - More on Order
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Lead-TimeTo be Confirmed
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IXTP1R4N60P Specifications

Part Number IXTP1R4N60P
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series PolarHV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IXTP1R4N60P Documents

IXTP1R4N60P, IXTP1R4N60P Datasheet (Total Pages: 4, Size: 152.02 KB)
IXTU1R4N60P Datasheet CoverIXTU1R4N60P Datasheet Page 2IXTU1R4N60P Datasheet Page 3IXTU1R4N60P Datasheet Page 4

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