Datasheet | SI4972DY-T1-GE3 |
File Size | 142.4 KB |
Total Pages | 12 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | SI4972DY-T1-GE3, SI4972DY-T1-E3 |
Description | MOSFET 2N-CH 30V 10.8A 8-SOIC, MOSFET 2N-CH 30V 10.8A 8SOIC |
SI4972DY-T1-GE3 - Vishay Siliconix
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Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A Rds On (Max) @ Id, Vgs 14.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V Power - Max 3.1W, 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A Rds On (Max) @ Id, Vgs 14.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V Power - Max 3.1W, 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |