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SI4972DY-T1-E3
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SI4972DY-T1-E3


Part Number SI4972DY-T1-E3
Zouser Part # SI4972DY-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 10.8A 8SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4972DY-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock502 - More on Order
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SI4972DY-T1-E3 Specifications

Part Number SI4972DY-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
Power - Max 3.1W, 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

SI4972DY-T1-E3 Documents

SI4972DY-T1-E3, SI4972DY-T1-E3 Datasheet (Total Pages: 12, Size: 142.4 KB)
SI4972DY-T1-GE3 Datasheet CoverSI4972DY-T1-GE3 Datasheet Page 2SI4972DY-T1-GE3 Datasheet Page 3SI4972DY-T1-GE3 Datasheet Page 4SI4972DY-T1-GE3 Datasheet Page 5SI4972DY-T1-GE3 Datasheet Page 6SI4972DY-T1-GE3 Datasheet Page 7SI4972DY-T1-GE3 Datasheet Page 8SI4972DY-T1-GE3 Datasheet Page 9SI4972DY-T1-GE3 Datasheet Page 10SI4972DY-T1-GE3 Datasheet Page 11SI4972DY-T1-GE3 Datasheet Page 12

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