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| Datasheet | SI8410DB-T2-E1 |
| File Size | 163.89 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI8410DB-T2-E1 |
| Description | MOSFET N-CH 20V MICROFOOT |
SI8410DB-T2-E1 - Vishay Siliconix
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URL Link
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V FET Feature - Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Micro Foot (1x1) Package / Case 4-UFBGA |