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SI8410DB-T2-E1


Part Number SI8410DB-T2-E1
Zouser Part # SI8410DB-T2-E1
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V MICROFOOT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI8410DB-T2-E1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock3,992 - More on Order
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SI8410DB-T2-E1 Specifications

Part Number SI8410DB-T2-E1
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V
FET Feature -
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Micro Foot (1x1)
Package / Case 4-UFBGA

SI8410DB-T2-E1 Documents

SI8410DB-T2-E1, SI8410DB-T2-E1 Datasheet (Total Pages: 8, Size: 163.89 KB)
SI8410DB-T2-E1 Datasheet CoverSI8410DB-T2-E1 Datasheet Page 2SI8410DB-T2-E1 Datasheet Page 3SI8410DB-T2-E1 Datasheet Page 4SI8410DB-T2-E1 Datasheet Page 5SI8410DB-T2-E1 Datasheet Page 6SI8410DB-T2-E1 Datasheet Page 7SI8410DB-T2-E1 Datasheet Page 8

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