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| Datasheet | TPC8212-H(TE12LQ,M |
| File Size | 218.43 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | TPC8212-H(TE12LQ,M |
| Description | MOSFET 2N-CH 30V 6A SOP8 |
TPC8212-H(TE12LQ,M - Toshiba Semiconductor and Storage
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URL Link
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |