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TPC8212-H(TE12LQ,M
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TPC8212-H(TE12LQ,M


Part Number TPC8212-H(TE12LQ,M
Zouser Part # TPC8212-H-TE12LQ-M
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6A SOP8
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models TPC8212-H(TE12LQ,M PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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TPC8212-H(TE12LQ,M Specifications

Part Number TPC8212-H(TE12LQ,M
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Arrays
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V
Power - Max 450mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)

TPC8212-H(TE12LQ,M Documents

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