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2SK1119(F)


Part Number 2SK1119(F)
Zouser Part # 2SK1119-F
Manufacturer Toshiba Semiconductor and Storage
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 4A TO-220AB
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models 2SK1119(F) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock438 - More on Order
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Lead-TimeTo be Confirmed
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2SK1119(F) Specifications

Part Number 2SK1119(F)
Brand Toshiba Semiconductor and Storage
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

2SK1119(F) Documents

2SK1119(F), 2SK1119(F) Datasheet (Total Pages: 6, Size: 541.88 KB)
2SK1119(F) Datasheet Cover2SK1119(F) Datasheet Page 22SK1119(F) Datasheet Page 32SK1119(F) Datasheet Page 42SK1119(F) Datasheet Page 52SK1119(F) Datasheet Page 6

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