Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Enlarge
For Reference Only
IPB029N06N3GE8187ATMA1 |
|
| Part Number | IPB029N06N3GE8187ATMA1 |
| Zouser Part # | IPB029N06N3GE8187ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 60V 120A TO263-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB029N06N3GE8187ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 523 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
IPB029N06N3GE8187ATMA1 Specifications
| Part Number | IPB029N06N3GE8187ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 118µA | |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 188W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D²PAK (TO-263AB) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB029N06N3GE8187ATMA1 Documents
The Products You May Be Interested In
 |
ZVP2110ASTOB | MOSFET P-CH 100V 0.23A TO92-3 | 646 More on Order |
 |
IRFB7446GPBF | MOSFET N CH 40V 120A TO220AB | 1818 More on Order |
 |
IXFK170N10 | MOSFET N-CH 100V 170A TO-264AA | 443 More on Order |
|
AUIRL7732S2TR | MOSFET N-CH 40V 14A DIRECTFET | 146 More on Order |
 |
IPZ40N04S55R4ATMA1 | MOSFET N-CH 8TDSON | 12260 More on Order |
 |
FQI5N20LTU | MOSFET N-CH 200V 4.5A I2PAK | 513 More on Order |
 |
STW13NM50N | MOSFET N-CH 500V 12A TO-247 | 209 More on Order |
 |
TK31E60X,S1X | MOSFET N-CH 600V 30.8A TO-220 | 310 More on Order |
 |
H7N1002LSTL-E | MOSFET N-CH 100V LDPAK | 257 More on Order |
 |
NTD4805NT4G | MOSFET N-CH 30V 12.7A DPAK | 297 More on Order |
 |
STW14NM50FD | MOSFET N-CH 500V 14A TO-247 | 569 More on Order |
 |
APT10078SLLG | MOSFET N-CH 1000V 14A D3PAK | 199 More on Order |