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IPB79CN10N G


Part Number IPB79CN10N G
Zouser Part # IPB79CN10N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 13A TO263-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPB79CN10N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock470 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IPB79CN10N G Specifications

Part Number IPB79CN10N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 79mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB79CN10N G Documents

IPB79CN10N G, IPB79CN10N G Datasheet (Total Pages: 13, Size: 621.19 KB)
IPU78CN10N G Datasheet CoverIPU78CN10N G Datasheet Page 2IPU78CN10N G Datasheet Page 3IPU78CN10N G Datasheet Page 4IPU78CN10N G Datasheet Page 5IPU78CN10N G Datasheet Page 6IPU78CN10N G Datasheet Page 7IPU78CN10N G Datasheet Page 8IPU78CN10N G Datasheet Page 9IPU78CN10N G Datasheet Page 10IPU78CN10N G Datasheet Page 11IPU78CN10N G Datasheet Page 12IPU78CN10N G Datasheet Page 13

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