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IXFH6N120P


Part Number IXFH6N120P
Zouser Part # IXFH6N120P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1200V 6A TO-247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXFH6N120P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock224 - More on Order
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Lead-TimeCan Ship Immediately
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IXFH6N120P Specifications

Part Number IXFH6N120P
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™, PolarP2™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3

IXFH6N120P Documents

IXFH6N120P, IXFH6N120P Datasheet (Total Pages: 5, Size: 172.52 KB)
IXFH6N120P Datasheet CoverIXFH6N120P Datasheet Page 2IXFH6N120P Datasheet Page 3IXFH6N120P Datasheet Page 4IXFH6N120P Datasheet Page 5

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