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MT3S111P(TE12L,F) |
|
| Part Number | MT3S111P(TE12L,F) |
| Zouser Part # | MT3S111P-TE12L-F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Semiconductors › Transistors › Bipolar (BJT) - RF |
| Description | RF TRANS NPN 6V 8GHZ PW-MINI |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | MT3S111P(TE12L,F) PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
| In Stock | 8,361 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQ| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
MT3S111P(TE12L,F) Specifications
| Part Number | MT3S111P(TE12L,F) | |
| Brand | Toshiba Semiconductor and Storage | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | Bipolar (BJT) - RF | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 8GHz | |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz | |
| Gain | 10.5dB | |
| Power - Max | 1W | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V | |
| Current - Collector (Ic) (Max) | 100mA | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Supplier Device Package | PW-MINI |
MT3S111P(TE12L,F) Documents
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