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Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 1/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC5086-O,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SSM

In Stock208,046

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
BFR360FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSFP-3

In Stock105,357

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFP640H6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.5V 40GHZ SOT343-4

In Stock62,520

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFP650H6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.5V 37GHZ SOT343-4

In Stock41,136

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFR740L3RHE6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ TSLP-3

In Stock24,289

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3
BFQ790H6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6.1V 1.85GHZ SOT89

In Stock10,981

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6.1V
Frequency - Transition: 1.85GHz
Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
Gain: 17dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
2N2857
Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.9GHZ TO72

In Stock3,981

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Manufacturer: Central Semiconductor Corp
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72
KST10MTF
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

In Stock20,745

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
MMBTH10LT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

In Stock52,570

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MMBTH10-4LT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

In Stock14,097

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MMBTH81
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23-3

In Stock43,981

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MMBT918LT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

In Stock9,259

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 11dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MMBT5179
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ SOT23-3

In Stock111,885

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
BFR181WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT323-3

In Stock56,330

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFP183E7764HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT143-4

In Stock8,682

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4
BFP196WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7.5GHZ SOT343-4

In Stock9,476

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
2SC5066-O,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SSM

In Stock8,065

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
BFR193WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT323-3

In Stock29,424

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFR183E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT23-3

In Stock16,571

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 17.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFR193E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT23-3

In Stock53,800

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFP196WNH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7.5GHZ SOT343-4

In Stock4,214

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
Gain: 9.7dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFR193FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ TSFP-3

In Stock9,152

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
BFP183WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8.5GHZ SOT343-4

In Stock12,321

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFR182E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT23-3

In Stock4,314

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 12dB ~ 18dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFR93AE6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT23-3

In Stock49,015

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFR93AWH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT323-3

In Stock18,833

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFR106E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT23-3

In Stock34,953

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain: 8.5dB ~ 13dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 210mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFP420FH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 25GHZ 4TSFP

In Stock14,369

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFP460H6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.8V 22GHZ SOT343-4

In Stock4,916

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFS17NTA
Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 11V 3.2GHZ SOT23-3

In Stock4,368

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 11V
Frequency - Transition: 3.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3