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MT3S20TU(TE85L) |
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Part Number | MT3S20TU(TE85L) |
Zouser Part # | MT3S20TU-TE85L |
Manufacturer | Toshiba Semiconductor and Storage |
Category | Semiconductors › Transistors › Bipolar (BJT) - RF |
Description | RF TRANS NPN 12V 7GHZ UFM |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | MT3S20TU(TE85L) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Shipping
Payment
Quick Inquiry
In Stock | 432 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Pricing (USD)
Price is not available, Please RFQQty. | Unit Price | Ext. Price |
---|---|---|
1 | $ 0.0000 | $ 0.0000 |
100 | $ 0.0000 | $ 0.0000 |
500 | $ 0.0000 | $ 0.0000 |
1000 | $ 0.0000 | $ 0.0000 |
Zouser will offer the most competitive prices for you, please refer to the quotations.
MT3S20TU(TE85L) Specifications
Part Number | MT3S20TU(TE85L) | |
Brand | Toshiba Semiconductor and Storage | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | Bipolar (BJT) - RF | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Transistor Type | NPN | |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz | |
Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V | |
Gain | 12dB | |
Power - Max | 900mW | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V | |
Current - Collector (Ic) (Max) | 80mA | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 3-SMD, Flat Leads | |
Supplier Device Package | UFM |
MT3S20TU(TE85L) Documents
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