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NTD3817N-1G


Part Number NTD3817N-1G
Zouser Part # NTD3817N-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 16V 7.6A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NTD3817N-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock445 - More on Order
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Lead-TimeTo be Confirmed
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NTD3817N-1G Specifications

Part Number NTD3817N-1G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 34.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 702pF @ 12V
FET Feature -
Power Dissipation (Max) 1.2W (Ta), 25.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD3817N-1G Documents

NTD3817N-1G, NTD3817N-1G Datasheet (Total Pages: 8, Size: 94.43 KB)
NTD3817NT4G Datasheet CoverNTD3817NT4G Datasheet Page 2NTD3817NT4G Datasheet Page 3NTD3817NT4G Datasheet Page 4NTD3817NT4G Datasheet Page 5NTD3817NT4G Datasheet Page 6NTD3817NT4G Datasheet Page 7NTD3817NT4G Datasheet Page 8

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