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NTD6416ANL-1G


Part Number NTD6416ANL-1G
Zouser Part # NTD6416ANL-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 19A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NTD6416ANL-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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NTD6416ANL-1G Specifications

Part Number NTD6416ANL-1G
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD6416ANL-1G Documents

NTD6416ANL-1G, NTD6416ANL-1G Datasheet (Total Pages: 7, Size: 131.11 KB)
NVD6416ANLT4G Datasheet CoverNVD6416ANLT4G Datasheet Page 2NVD6416ANLT4G Datasheet Page 3NVD6416ANLT4G Datasheet Page 4NVD6416ANLT4G Datasheet Page 5NVD6416ANLT4G Datasheet Page 6NVD6416ANLT4G Datasheet Page 7

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