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PSMN102-200Y,115
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PSMN102-200Y,115


Part Number PSMN102-200Y,115
Zouser Part # PSMN102-200Y-115
Manufacturer Nexperia
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 21.5A LFPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models PSMN102-200Y,115 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock181,203 - More on Order
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Lead-TimeTo be Confirmed
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PSMN102-200Y,115 Specifications

Part Number PSMN102-200Y,115
Brand Nexperia
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1568pF @ 30V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669

PSMN102-200Y,115 Documents

PSMN102-200Y, PSMN102-200Y Datasheet (Total Pages: 13, Size: 332.92 KB)
PSMN102-200Y Datasheet CoverPSMN102-200Y Datasheet Page 2PSMN102-200Y Datasheet Page 3PSMN102-200Y Datasheet Page 4PSMN102-200Y Datasheet Page 5PSMN102-200Y Datasheet Page 6PSMN102-200Y Datasheet Page 7PSMN102-200Y Datasheet Page 8PSMN102-200Y Datasheet Page 9PSMN102-200Y Datasheet Page 10PSMN102-200Y Datasheet Page 11PSMN102-200Y Datasheet Page 12PSMN102-200Y Datasheet Page 13

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