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SI1062X-T1-GE3


Part Number SI1062X-T1-GE3
Zouser Part # SI1062X-T1-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V SC-89
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SI1062X-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock47,141 - More on Order
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SI1062X-T1-GE3 Specifications

Part Number SI1062X-T1-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
FET Feature -
Power Dissipation (Max) 220mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490

SI1062X-T1-GE3 Documents

SI1062X-T1-GE3, SI1062X-T1-GE3 Datasheet (Total Pages: 8, Size: 158.98 KB)
SI1062X-T1-GE3 Datasheet CoverSI1062X-T1-GE3 Datasheet Page 2SI1062X-T1-GE3 Datasheet Page 3SI1062X-T1-GE3 Datasheet Page 4SI1062X-T1-GE3 Datasheet Page 5SI1062X-T1-GE3 Datasheet Page 6SI1062X-T1-GE3 Datasheet Page 7SI1062X-T1-GE3 Datasheet Page 8

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