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SI4850EY-T1


Part Number SI4850EY-T1
Zouser Part # SI4850EY-T1
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 60V 6A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SI4850EY-T1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock143 - More on Order
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SI4850EY-T1 Specifications

Part Number SI4850EY-T1
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.7W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

SI4850EY-T1 Documents

SI4850EY-T1, SI4850EY-T1 Datasheet (Total Pages: 7, Size: 178.99 KB)
SI4850EY-T1 Datasheet CoverSI4850EY-T1 Datasheet Page 2SI4850EY-T1 Datasheet Page 3SI4850EY-T1 Datasheet Page 4SI4850EY-T1 Datasheet Page 5SI4850EY-T1 Datasheet Page 6SI4850EY-T1 Datasheet Page 7

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