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SIE854DF-T1-E3


Part Number SIE854DF-T1-E3
Zouser Part # SIE854DF-T1-E3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 60A POLARPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models SIE854DF-T1-E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock368 - More on Order
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Lead-TimeTo be Confirmed
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SIE854DF-T1-E3 Specifications

Part Number SIE854DF-T1-E3
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.2mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)

SIE854DF-T1-E3 Documents

SIE854DF-T1-E3, SIE854DF-T1-E3 Datasheet (Total Pages: 7, Size: 122.99 KB)
SIE854DF-T1-E3 Datasheet CoverSIE854DF-T1-E3 Datasheet Page 2SIE854DF-T1-E3 Datasheet Page 3SIE854DF-T1-E3 Datasheet Page 4SIE854DF-T1-E3 Datasheet Page 5SIE854DF-T1-E3 Datasheet Page 6SIE854DF-T1-E3 Datasheet Page 7

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