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SIHG30N60E-GE3


Part Number SIHG30N60E-GE3
Zouser Part # SIHG30N60E-GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 29A TO247AC
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIHG30N60E-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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SIHG30N60E-GE3 Specifications

Part Number SIHG30N60E-GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3

SIHG30N60E-GE3 Documents

SIHG30N60E-GE3, SIHG30N60E-GE3 Datasheet (Total Pages: 8, Size: 181.54 KB)
SIHG30N60E-E3 Datasheet CoverSIHG30N60E-E3 Datasheet Page 2SIHG30N60E-E3 Datasheet Page 3SIHG30N60E-E3 Datasheet Page 4SIHG30N60E-E3 Datasheet Page 5SIHG30N60E-E3 Datasheet Page 6SIHG30N60E-E3 Datasheet Page 7SIHG30N60E-E3 Datasheet Page 8

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