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SQM10250E_GE3


Part Number SQM10250E_GE3
Zouser Part # SQM10250E_GE3
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CHAN 250V TO-263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SQM10250E_GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,398 - More on Order
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SQM10250E_GE3 Specifications

Part Number SQM10250E_GE3
Brand Vishay Siliconix
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4050pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SQM10250E_GE3 Documents

SQM10250E_GE3, SQM10250E_GE3 Datasheet (Total Pages: 9, Size: 217.2 KB)
SQM10250E_GE3 Datasheet CoverSQM10250E_GE3 Datasheet Page 2SQM10250E_GE3 Datasheet Page 3SQM10250E_GE3 Datasheet Page 4SQM10250E_GE3 Datasheet Page 5SQM10250E_GE3 Datasheet Page 6SQM10250E_GE3 Datasheet Page 7SQM10250E_GE3 Datasheet Page 8SQM10250E_GE3 Datasheet Page 9

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