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Transistors

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S200-50
S200-50

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 110V 30MHZ 55HX

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 110V
  • Frequency - Transition: 1.5MHz ~ 30MHz
  • Gain: 12dB ~ 14.5dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HX
  • Supplier Device Package: 55HX
In Stock542

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S200-50A
S200-50A

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock296

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SD1013
SD1013

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 150MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 150MHz
  • Gain: 10dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock296

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SD1013-03
SD1013-03

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 150MHZ M113

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 150MHz
  • Gain: 10dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock455

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SD1013-20H
SD1013-20H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock473

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SD1015
SD1015

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 150MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 150MHz
  • Gain: 10dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock607

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SD1019
SD1019

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 136MHZ M130

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 136MHz
  • Gain: 4.5dB
  • Power - Max: 117W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M130
  • Supplier Device Package: M130
In Stock428

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SD1019-02
SD1019-02

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock452

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SD1057-01H
SD1057-01H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock569

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SD1127
SD1127

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ TO39

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Gain: 12dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 640mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock320

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SD1143-01
SD1143-01

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ M113

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Gain: 10dB
  • Power - Max: 20W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock624

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SD1224
SD1224

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 175MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock487

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SD1224-02
SD1224-02

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 175MHZ M113

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock651

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SD1244-09H
SD1244-09H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock647

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SD1244-12H
SD1244-12H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock199

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SD1274
SD1274

STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V M135

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock344

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SD1274-01
SD1274-01

STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V M113

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock630

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SD1275
SD1275

STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V M135

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Gain: 9dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock431

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SD1275-01
SD1275-01

STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V M113

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Gain: 9dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock512

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SD1309-01H
SD1309-01H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock640

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SD1330-05H
SD1330-05H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock388

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SD1330-06H
SD1330-06H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock151

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SD1332-05C
SD1332-05C

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5.5GHZ M150

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C
  • Mounting Type: Surface Mount
  • Package / Case: M150
  • Supplier Device Package: M150
In Stock239

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SD1332-05H
SD1332-05H

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5.5GHZ M150

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C
  • Mounting Type: Surface Mount
  • Package / Case: M150
  • Supplier Device Package: M150
In Stock267

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SD1372-01H
SD1372-01H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock442

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SD1372-03H
SD1372-03H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock300

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SD1372-06H
SD1372-06H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock439

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SD1400-03
SD1400-03

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock509

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SD1405
SD1405

STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V M174

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Gain: 13dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M174
  • Supplier Device Package: M174
In Stock553

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SD1419-06H
SD1419-06H

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock543

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