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Part Number	Description	In Stock
2N5210TAR ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock307 More on Order
2N5210TF ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock412 More on Order
2N5210TFR ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock303 More on Order
2N5224 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN LO LEVEL SWITCH TRANS TO92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 350mV @ 3mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 625mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock268 More on Order
2N5226 ON Semiconductor	Transistors - Bipolar (BJT) - Single PNP AMP TRANS./2N5225 COMPLIMENT Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 800mV @ 10mA, 100mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock514 More on Order
2N5232A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A TO-92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock5,590 More on Order
2N5237 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock541 More on Order
2N5238 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock471 More on Order
2N5238S Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock483 More on Order
2N5240 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock372 More on Order
2N5241 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock202 More on Order
2N5301 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock547 More on Order
2N5301 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 30A TO-3 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 40V Power - Max: 200W Frequency - Transition: 4MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	In Stock1,332 More on Order
2N5302 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock237 More on Order
2N5302G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 30A TO3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Power - Max: 200W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock736 More on Order
2N5303 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock439 More on Order
2N5303 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 20A TO-3 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 80V Power - Max: 200W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	In Stock592 More on Order
2N5306 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 25V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock455 More on Order
2N5306 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 25V 0.3A TO-92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock6,371 More on Order
2N5306_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 25V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock359 More on Order
2N5307 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock423 More on Order
2N5307_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock473 More on Order
2N5308 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock369 More on Order
2N5308 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 0.3A TO-92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock3,760 More on Order
2N5308_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock364 More on Order
2N5308_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock539 More on Order
2N5308_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock152 More on Order
2N5308_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 40V 1.2A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock496 More on Order
2N5320 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN 10W TRANS./2N5322 COMPLIMENT Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 75V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V Power - Max: 10W Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock392 More on Order
2N5320 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 75V 2A TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 75V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V Power - Max: 10W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock703 More on Order