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Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
2N697 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock515 More on Order
2N697A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 35V TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 50MHz Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock659 More on Order
2N697S Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock203 More on Order
2N6987U Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock263 More on Order
2N6989U Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock174 More on Order
2N699 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock615 More on Order
2N7051 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock377 More on Order
2N7051_D10Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock265 More on Order
2N7052 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock318 More on Order
2N7052_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock654 More on Order
2N7053 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-226 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-226-3	In Stock376 More on Order
2N7053_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-226 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-226-3	In Stock187 More on Order
2N7053_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-226 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-226-3	In Stock262 More on Order
2N7053_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 1.5A TO-226 Manufacturer: ON Semiconductor Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-226-3	In Stock565 More on Order
2N706 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock519 More on Order
2N706A Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock172 More on Order
2N708 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO-18 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector Cutoff (Max): 25µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Frequency - Transition: 400MHz Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock2,448 More on Order
2N720A STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-18 Manufacturer: STMicroelectronics Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock489 More on Order
2N720A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-18 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock652 More on Order
2N915 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 250MHz Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock510 More on Order
2N918 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock280 More on Order
2N918UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V 0.05A Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock386 More on Order
2N930 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.03A TO18 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 300mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock488 More on Order
2N930A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.03A TO18 Manufacturer: Microsemi Corporation Series: *	In Stock499 More on Order
2N930UB Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock473 More on Order
2PA1015GR,126 NXP	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A TO-92 Manufacturer: NXP USA Inc. Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 500mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock554 More on Order
2PA1015Y,126 NXP	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A TO-92 Manufacturer: NXP USA Inc. Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 500mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock462 More on Order
2PA1576Q,115 Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SOT323 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock547 More on Order
2PA1576Q,135 Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SOT323 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock302 More on Order
2PA1576R,115 Nexperia	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SOT323 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock527 More on Order