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Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
ULN2803ADWRG4 Texas Instruments	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18SO Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOIC	In Stock37,191 More on Order
ULN2803AFWG,C,EL Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18SOL Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.31W Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOL	In Stock550 More on Order
ULN2803AN Texas Instruments	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-PDIP	In Stock259 More on Order
ULN2803ANG4 Texas Instruments	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-PDIP	In Stock347 More on Order
ULN2803APG,CN Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.47W Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock253 More on Order
ULN2804A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock3,297 More on Order
ULN2805A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock241 More on Order
ULQ2001A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16DIP Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	In Stock629 More on Order
ULQ2001D1013TR STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16SO Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SO	In Stock319 More on Order
ULQ2003A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16DIP Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	In Stock1,296 More on Order
ULQ2003D1 STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16SO Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SO	In Stock449 More on Order
ULQ2003D1013TR STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16SO Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SO	In Stock10,008 More on Order
ULQ2003D1013TRY STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16SO Manufacturer: STMicroelectronics Series: Automotive, AEC-Q100 Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SO	In Stock21,739 More on Order
ULQ2004A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16DIP Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.7V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	In Stock1,000 More on Order
ULQ2004D1013TR STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 7NPN DARL 50V 0.5A 16SO Manufacturer: STMicroelectronics Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SO	In Stock7,786 More on Order
ULQ2801A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays IC ARRAYS EIGHT DARL 18-DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock422 More on Order
ULQ2802A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock538 More on Order
ULQ2803A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock10,016 More on Order
ULQ2804A STMicroelectronics	Transistors - Bipolar (BJT) - Arrays TRANS 8NPN DARL 50V 0.5A 18DIP Manufacturer: STMicroelectronics Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 2.25W Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	In Stock3,398 More on Order
UMB10NFHATN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays PNP+PNP DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock458 More on Order
UMB2NFHATN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays PNP+PNP DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock319 More on Order
UMB3NFHATN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays PNP+PNP DIGITAL TRANSISTOR (WITH Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock464 More on Order
UMB4NFHATN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays PNP+PNP DIGITAL TRANSISTOR (CORR Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock518 More on Order
UMH3NFHATN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays NPN+NPN DIGITAL TRANSISTOR(WITH Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 150mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock4,743 More on Order
UML23NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays NPN GENERAL PURPOSE AMPLIFICATIO Manufacturer: Rohm Semiconductor Transistor Type: NPN + Zener Diode (Isolated) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock4,838 More on Order
UML2N-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Arrays DIODE Manufacturer: Micro Commercial Co Transistor Type: NPN + Diode (Isolated) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	In Stock571 More on Order
UML6N-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Arrays DIODE Manufacturer: Micro Commercial Co Transistor Type: NPN + Diode (Isolated) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 120mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	In Stock513 More on Order
UMT18NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays PNP+PNP LOW VCE(SAT) TRANSISTOR Manufacturer: Rohm Semiconductor Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 260MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock4,394 More on Order
UMT1NTN Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A 6UMT Manufacturer: Rohm Semiconductor Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	In Stock40,247 More on Order
UMT1N-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SOT363 Manufacturer: Micro Commercial Co Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock14,614 More on Order