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Part Number	Description	In Stock
DDA114YU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock565 More on Order
DDA122LH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 220Ohms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock185 More on Order
DDA122LU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 220Ohms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock399 More on Order
DDA122TH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 220Ohms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock318 More on Order
DDA122TU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 220Ohms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock443 More on Order
DDA123JH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock200 More on Order
DDA123JK-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT26 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock463 More on Order
DDA123JU-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock234 More on Order
DDA123JU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock564 More on Order
DDA124EH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock4,052 More on Order
DDA124EK-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT26 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock638 More on Order
DDA124EU-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock483 More on Order
DDA124EU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock522 More on Order
DDA142JH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 470Ohms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock611 More on Order
DDA142JU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 470Ohms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock280 More on Order
DDA142TH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 470Ohms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock235 More on Order
DDA142TU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 470Ohms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock342 More on Order
DDA143EH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock306 More on Order
DDA143TH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock591 More on Order
DDA143TK-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT26 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock501 More on Order
DDA143TU-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock180 More on Order
DDA143TU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock612 More on Order
DDA144EH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock3,861 More on Order
DDA144EK-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SOT26 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock458 More on Order
DDA144EU-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock241 More on Order
DDA144EU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock472 More on Order
DDC113TU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock43,119 More on Order
DDC114EH-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W SOT563 Manufacturer: Diodes Incorporated Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock534 More on Order
DDC114EU-7 Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock380 More on Order
DDC114EU-7-F Diodes Incorporated	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W SOT363 Manufacturer: Diodes Incorporated Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock175 More on Order