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NP062AN00A
NP062AN00A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock14,078

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NP063D300A
NP063D300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock402

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NP0G1AE00A
NP0G1AE00A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock540

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NP0G3A000A
NP0G3A000A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock470

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NP0G3A300A
NP0G3A300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock622

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NP0G3D100A
NP0G3D100A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms, 47kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock288

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NP0G3D200A
NP0G3D200A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms, 22kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock188

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NP0G3D300A
NP0G3D300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms, 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock333

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NP0H3A300A
NP0H3A300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS NPN/PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz, 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock357

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NP0J1A300A
NP0J1A300A

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SSSMINI6

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SSSMini6-F1
In Stock187

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NSB13211DW6T1G
NSB13211DW6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS 0.23W SC88

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms, 10kOhms
  • Resistor - Emitter Base (R2): 4.7kOhms, 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock513

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NSB1706DMW5T1
NSB1706DMW5T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SC70

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SC-88A (SC-70-5/SOT-353)
In Stock246

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NSB1706DMW5T1G
NSB1706DMW5T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2NPN PREBIAS 0.25W SC70

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SC-88A (SC-70-5/SOT-353)
In Stock48,538

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NSB4904DW1T1G
NSB4904DW1T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS NPN/PNP PREBIAS 0.25W SC88

  • Manufacturer: ON Semiconductor
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock446

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NSBA113EDXV6T1
NSBA113EDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock505

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NSBA113EDXV6T1G
NSBA113EDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.25W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 1kOhms
  • Resistor - Emitter Base (R2): 1kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
In Stock542

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NSBA114EDP6T5G
NSBA114EDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.338W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 338mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock242

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NSBA114EDXV6T1G
NSBA114EDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock179

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NSBA114EDXV6T5
NSBA114EDXV6T5

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock469

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NSBA114EDXV6T5G
NSBA114EDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock184

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NSBA114TDP6T5G
NSBA114TDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.408W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 408mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock14,000

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NSBA114TDXV6T1
NSBA114TDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock637

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NSBA114TDXV6T1G
NSBA114TDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock303

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NSBA114TDXV6T5
NSBA114TDXV6T5

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock445

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NSBA114TDXV6T5G
NSBA114TDXV6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS PREBIAS DUAL PNP SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock508

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NSBA114YDP6T5G
NSBA114YDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.408W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 408mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock228

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NSBA114YDXV6T1
NSBA114YDXV6T1

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock507

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NSBA114YDXV6T1G
NSBA114YDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock350

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NSBA115EDXV6T1G
NSBA115EDXV6T1G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.5W SOT563

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • Resistor - Emitter Base (R2): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock302

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NSBA115TDP6T5G
NSBA115TDP6T5G

ON Semiconductor

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

TRANS 2PNP PREBIAS 0.408W SOT963

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Power - Max: 408mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock443

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