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Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
PUMH9,135 Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP Manufacturer: Nexperia USA Inc. Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	In Stock614 More on Order
PUMH9,165 Nexperia	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W 6TSSOP Manufacturer: Nexperia USA Inc. Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	In Stock399 More on Order
PUML1,115 NXP	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN 6TSSOP Manufacturer: NXP USA Inc. Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 200mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	In Stock185 More on Order
QSH29TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 1.25W TSMT6 Manufacturer: Rohm Semiconductor Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 70V Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA Current - Collector Cutoff (Max): 500nA (ICBO) Power - Max: 1.25W Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	In Stock305 More on Order
RN1501(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock607 More on Order
RN1502(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock211 More on Order
RN1503(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock487 More on Order
RN1505(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock1,641 More on Order
RN1506(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock399 More on Order
RN1507(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock162 More on Order
RN1508(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock503 More on Order
RN1509(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock174 More on Order
RN1510(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock4,391 More on Order
RN1511(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SMV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	In Stock191 More on Order
RN1601(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock271 More on Order
RN1602(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock390 More on Order
RN1604(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock432 More on Order
RN1605TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,107 More on Order
RN1606(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,624 More on Order
RN1607(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,769 More on Order
RN1608(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock375 More on Order
RN1609(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock162 More on Order
RN1610(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock484 More on Order
RN1611(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,873 More on Order
RN1673(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.3W SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock448 More on Order
RN1701JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	In Stock621 More on Order
RN1701,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock252 More on Order
RN1702JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	In Stock4,842 More on Order
RN1702,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased NPNX2 BRT Q1BSR10KOHM Q1BER10KOH Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock643 More on Order
RN1703JE(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ESV Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	In Stock243 More on Order