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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 13/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI6 |
In Stock621 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SMINI6-G1 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMINI5 |
In Stock460 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: SMini5-G1 |
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|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock229 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSSMINI6 |
In Stock16,193 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz, 80MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-963 |
Supplier Device Package: SSSMini6-F1 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS SSSMINI6 |
In Stock14,078 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 80mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-963 |
Supplier Device Package: SSSMini6-F1 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock240 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI5 |
In Stock373 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 30V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms, 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 1.2V @ 330µA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz, 80MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-665 |
Supplier Device Package: SSMini5-F2 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SSMINI5 |
In Stock225 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 80MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini5-F3 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI6 |
In Stock262 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMINI6-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6 |
In Stock185 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz, 80MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMINI6-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI5 |
In Stock369 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms, 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz, 80MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-665 |
Supplier Device Package: SSMini5-F2 |
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|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SSMINI6 |
In Stock343 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 150MHz |
Power - Max: 125mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMINI6-F1 |
|
|
|
Panasonic Electronic Components |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN MINI6 |
In Stock4,327 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Resistor - Base (R1): 270Ohms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 50mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 200MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: MINI6-G1 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock358 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 |
In Stock599 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock325 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock471 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100µA (ICBO) |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.25W SOT363 |
In Stock298 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock162 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W US6 |
In Stock386 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 |
In Stock355 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock295 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock383 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100µA (ICBO) |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock292 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock199 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock371 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 6TSSOP |
In Stock607 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 |
In Stock641 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 250MHz, 200MHz |
Power - Max: 100mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock375 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased PRMD2/SOT1268/DFN1412-6 |
In Stock280 More on Order |
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Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101 |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 230MHz |
Power - Max: 480mW |
Mounting Type: Surface Mount |
Package / Case: 6-XFDFN Exposed Pad |
Supplier Device Package: DFN1412-6 |