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CategorySemiconductors / Transistors / Bipolar (BJT) - Arrays, Pre-Biased
Records 1,584
Page 53/53
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SOT563 |
In Stock445 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock509 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock431 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.2W US6 |
In Stock343 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock374 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock420 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 |
In Stock244 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock518 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): 4.7kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz, 250MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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|
|
Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 |
In Stock347 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: 200MHz |
Power - Max: 200mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
|
ON Semiconductor |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS BRT 50V 100MA SOT563 |
In Stock198 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
|
|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP |
In Stock143 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V, 40V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 100MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 50V 6TSSOP |
In Stock286 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP 50V 6TSSOP |
In Stock418 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock523 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
Frequency - Transition: 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock461 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock504 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 230MHz, 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock150 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock456 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
Frequency - Transition: 230MHz, 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock357 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100nA |
Frequency - Transition: 230MHz, 180MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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|
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Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock174 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 22kOhms |
Resistor - Emitter Base (R2): 22kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 100mA |
Frequency - Transition: 230MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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|
|
Nexperia |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS RET SC-88 |
In Stock202 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47kOhms |
Resistor - Emitter Base (R2): 47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 230MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
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Renesas Electronics America |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANSISTOR NPN SC62-3 |
In Stock449 More on Order |
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Manufacturer: Renesas Electronics America |
Series: HD1 |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 1A |
Voltage - Collector Emitter Breakdown (Max): 60V |
Resistor - Base (R1): 1kOhms |
Resistor - Emitter Base (R2): 1kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): 100nA (ICBO) |
Frequency - Transition: - |
Power - Max: 2W |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: SC-62 |
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Micro Commercial Co |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased DIODE |
In Stock393 More on Order |
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Manufacturer: Micro Commercial Co |
Series: - |
Transistor Type: 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 4.7kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): - |
Frequency - Transition: 250MHz |
Power - Max: 150mW |
Mounting Type: Surface Mount |
Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: SOT-353 |
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NXP |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/NPN 6TSSOP |
In Stock185 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max): 100mA, 200mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 10kOhms |
Resistor - Emitter Base (R2): 10kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: 230MHz |
Power - Max: 300mW |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: 6-TSSOP |